? semiconductor components industries, llc, 2002 august, 2002 rev. 4 1 publication order number: murs320t3/d murs320t3, murs340t3, murs360t3 preferred devices surface mount ultrafast power rectifiers . . . employing stateoftheart epitaxial construction with oxide passivation and metal overlay contact. ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact size and weight are critical to the system. ? small compact surface mountable package with jbend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? low forward voltage drop (0.71 to 1.05 volts max @ 3.0 a, t j = 150 c) mechanical characteristics: ? case: epoxy, molded ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in 16 mm tape and reel, 2500 units per reel ? polarity: notch in plastic body indicates cathode lead ? marking: u3d, u3g, u3j maximum ratings please see the table on the following page device package shipping ordering information smc case 403 plastic murs320t3 smc 2500/tape & reel ultrafast rectifiers 3.0 amperes 200600 volts preferred devices are recommended choices for future use and best overall value. murs340t3 smc 2500/tape & reel murs360t3 smc 2500/tape & reel marking diagram http://onsemi.com u3x = specific device code x = d, g, or j y = year ww= work week yww u3x
murs320t3, murs340t3, murs360t3 http://onsemi.com 2 maximum ratings rating symbol murs320t3 murs340t3 murs360t3 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 400 600 volts average rectified forward current i f(av) 3.0 @ t l = 140 c 4.0 @ t l = 130 c 3.0 @ t l = 130 c 4.0 @ t l = 115 c 3.0 @ t l = 130 c 4.0 @ t l = 115 c amps nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 75 amps operating junction temperature t j 65 to +175 c thermal characteristics thermal resistance, junction to lead r q jl 11 c/w electrical characteristics maximum instantaneous forward voltage (note 1) (i f = 3.0 a, t j = 25 c) (i f = 4.0 a, t j = 25 c) (i f = 3.0 a, t j = 150 c) v f 0.875 0.89 0.71 1.25 1.28 1.05 1.25 1.28 1.05 volts maximum instantaneous reverse current (note 1) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 150 c) i r 5.0 150 10 250 10 250 m a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ m s) (i f = 0.5 a, i r = 1.0 a, i rec to 0.25 a) t rr 35 25 75 50 75 50 ns maximum forward recovery time (i f = 1.0 a, di/dt = 100 a/ m s, recovery to 1.0 v) t fr 25 50 50 ns 1. pulse test: pulse width = 300 m s, duty cycle 2.0%.
murs320t3, murs340t3, murs360t3 http://onsemi.com 3 murs320t3 figure 1. typical forward voltage v f, instantaneous voltage (volts) 0.3 0.6 0.4 0.8 3.0 0.2 0.1 2.0 0.7 0.7 0.3 0.5 5.0 , instantaneous forward current (amps) f 0.9 v r , reverse voltage (volts) 060 40 100 120 40 80 0.008 0.004 0.002 0.8 0.4 0.2 20 4.0 2.0 8.0 t j = 175 c i r 20 80 200 figure 2. typical reverse current* t c , case temperature ( c) 190 90 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 9.0 10 100 110 120 130 140 150 160 170 180 i f(av) , average forward current (amps) 0 1.5 1.0 0 2.0 1.0 3.0 5.0 4.0 10 7.0 6.0 p 0.5 5.0 figure 3. power dissipation figure 4. current derating, case 010 20 30 40 60 200 10 20 30 40 100 v r , reverse voltage (volts) figure 5. typical capacitance 0.5 1.0 1.0 1.1 1.2 100 c t j = 175 c 25 c 160 180 140 0.08 0.04 0.02 , reverse current ( a) t j = 100 c t j = 25 c 3.0 2.5 2.0 4.5 4.0 3.5 9.0 8.0 * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . rated voltage applied r jl = 11 c/w t j = 175 c c, capacitance (pf) square wave dc , average forward current (amps) typical capacitance at 0 v = 135 pf dc square wave (capacitiveload) i pk i av 20 10 5.0 i , average power dissipation (watts) f(av) 50 60 70 80 90 80 100 0.2
murs320t3, murs340t3, murs360t3 http://onsemi.com 4 murs340t3, murs360t3 figure 6. typical forward voltage v f, instantaneous voltage (volts) 0.5 1.1 0.7 1.5 3.0 0.05 0.02 2.0 0.7 1.3 0.07 0.5 5.0 , instantaneous forward current (amps) f 1.7 v r , reverse voltage (volts) 0 300 200 400 40 80 0.008 0.004 0.8 0.4 0.2 20 4.0 2.0 8.0 t j = 175 c i r 100 700 figure 7. typical reverse current* t c , case temperature ( c) 90 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 9.0 10 100 110 120 130 140 150 160 170 i f(av) , average forward current (amps) 0 1.5 1.0 0 2.0 1.0 3.0 5.0 4.0 10 7.0 6.0 p 0.5 5.0 figure 8. power dissipation figure 9. current derating, case 010 20 30 40 60 0 20 30 40 100 v r , reverse voltage (volts) figure 10. typical capacitance 0.9 1.0 1.9 2.1 2.3 100 c t j = 175 c 25 c 600 500 0.08 0.04 0.02 , reverse current ( a) t j = 100 c t j = 25 c 3.0 2.5 2.0 4.5 4.0 3.5 9.0 8.0 * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . c, capacitance (pf) square wave dc , average forward current (amps) typical capacitance at 0 v = 75 pf dc square wave 10 5.0 i , average power dissipation (watts) f(av) 50 60 70 80 90 80 100 0.3 0.03 0.1 400 200 10 50 70 90 70 80 0.3 0.2 (capacitive loads) i pk i av 20
murs320t3, murs340t3, murs360t3 http://onsemi.com 5 package dimensions smc case 40303 issue d s a db j p k h c dim min max min max millimeters inches a 0.260 0.280 6.60 7.11 b 0.220 0.240 5.59 6.10 c 0.075 0.095 1.90 2.41 d 0.115 0.121 2.92 3.07 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.305 0.320 7.75 8.13 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. 4. 403-01 thru -02 obsolete, new standard 403-03.
murs320t3, murs340t3, murs360t3 http://onsemi.com 6 notes
murs320t3, murs340t3, murs360t3 http://onsemi.com 7 notes
murs320t3, murs340t3, murs360t3 http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 291 kamimeguro, meguroku, tokyo, japan 1530051 phone : 81357733850 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. murs320t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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